Abstract
By measuring X-rays from a bent Si single crystal, we have observed the amplification of the reflected beams from the surface. The amplification is observed when the incident angle is adjusted to minimize the effective linear absorption coefficient due to the dynamical diffraction effect. When we increase the width of the incident X-rays along the incident azimuth, we observe on increase in reflected beam intensity. The amplification can be explained by the addition of the electric fields of the propagating beams along hyperbolic trajectories in the bent crystal to those of the reflected beams.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
