Abstract
A novel amperometric measuring circuit for reducing the channel cross-sensitivityand the experimental verification of its applicability in high accuracy 2D and 3Dsilicon magnetic-field microdevices are presented. The investigation carried outshows that the most crucial role in the cross-sensitivity phenomenon, especially inthe multidimensional Hall sensors, is the lateral parasitic conductance, whichgives the main component in this drawback. The novelty of the used metrologicalapproach, which drastically improves the accuracy, is related to keeping constantvoltage conditions on the chip surface contacts with and without magnetic field.The used circuit is characterized by high stability in a wide interval of change ofthe supply current and in a large range of magnetic inductions up to 1 T.Testing the 3D silicon magnetometer samples, about 45% reduction of thechannel cross-sensitivity is achieved, which is a very promising result. Thenew amperometric circuit is an integrated solution and together with themultidimensional sensor represents a one-chip microsystem with universalapplicability.
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