Abstract
Palladium, Indium and Silver-doped SnO2 thin film was deposited by chemical spray pyrolysis on ITO and porous silicon substrates to be a fast MgSO4·7H2O amperometric biosensor. The prepared SnO2 films were doped by dipping in palladium chloride PdCl2, indium chloride, InCl3 and silver nitrides AgNO3 dissolved in ethanol C2H5OH. The structural and optical properties of the prepared films were studied. The sensitivity behaviors of SnO2, SnO2: Pd, SnO2: In and SnO2: Ag based on the amperometric biosensor to MgSO4·7H2O salts were investigated at room temperature with different doping.
Highlights
Tin oxide (SnO2), a wide band gap semiconductor, is wellknown for its excellent gas sensitivity (Du et al 2009; Chen et al 2005) and its use in fabricating transparent conductive glasses (Shen et al 2009)
Palladium, Indium and Silver-doped SnO2 thin film was deposited by chemical spray pyrolysis on ITO and porous silicon substrates to be a fast MgSO4Á7H2O amperometric biosensor
The prepared SnO2 films were doped by dipping in palladium chloride PdCl2, indium chloride, InCl3 and silver nitrides AgNO3 dissolved in ethanol C2H5OH
Summary
Tin oxide (SnO2), a wide band gap semiconductor, is wellknown for its excellent gas sensitivity (Du et al 2009; Chen et al 2005) and its use in fabricating transparent conductive glasses (Shen et al 2009). A 0.1 M concentration aqueous precursor solution of tin chloride (SnCl4Á5H2O) has been prepared by dissolving a solute quantity of 3.5085 g of SnCl4Á5H2O in 100 mL dissolved in ethanol alcohol C2H5OH and distilled water has been employed in getting SnO2 thin films. Prior to depositing the films, the ITO glass substrates were thoroughly cleaned in distilled water and dried in air for 5 min. After that, they were soaked in alcohol to remove any stains and contaminants. A 5 s spraying time is maintained during the experiment with specific nitrogen carrier gas pressure. The spray rate of solution was maintained at 3.5 mL min-1 throughout the experiment
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