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Abstract
An amorphous-metal-oxide-semiconductor (AOS) thin-film planar-type spike-timing-dependent-plasticity (STDP) synapse device has been developed. The AOS is a non-rare material and can be easily deposited, and therefore it is inexpensive. On the other hand, the STDP is promising as a learning principle for neuromorphic systems. In this study, first, an AOS thin-film planar-type STDP synapse device is actually fabricated. Next, spiking pulses are applied to the synapse device as pre-signals and post-signals. Finally, STDP characteristics, namely, long-term-depression (LTD) and long-term-potentiation (LTP), are observed, which seem to be due to charge injection into the underlayer insulator film.
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