Abstract
Abstract With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method. The resulting films exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature, displaying a slight dependence on the value of m, in which the carrier density was 1019-1020 cm−3 the electron mobili ty was 12-20 cm2 V−1 s−1 showing no p n anomaly between Hall and Seebeck coefficients. The conductivity displayed no significant dependence on the temperature ranging from 10 to 300 K. X-ray diffraction, transmission electron microscopy and extended X-ray absorption fine structure measurements confirmed that the films were amorphous phases. A combined use of bremsstrahlung isochromat spectroscopy and ultraviolet photoelectron spectroscopy revealed that the conduction band tail had a large dispersion and that the Fermi level was located at the conduction band edge. The...
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