Abstract
AbstractThin films of hydrogenated silicon with band gap ranging from 2.0‐2.34 eV are prepared at deposition rate 8‐14 Å/sec in an indigenously fabricated HWCVD system keeping all parameters except substrate temperature fixed. The films grown at Ts ≤ 150 °C are found to be pure amorphous, whereas the formation of nanocrystalline phase starts at Ts ≥ 200 °C. With increase in Ts, crystalline fraction increases along with the increase in the band gap whereas the hydrogen content in the films and the deposition rate decreases. The variation of microstructure by varying substrate temperature without a significant decrease in deposition rate is useful for various device applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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