Abstract
ABSTRACTThe growth of thin Si films by RF glow discharge undergoes a transition from amorphous to microcrystalline as power density is increased. This results in a substantial change in the film's electrical conductivity and activation energy for electrical conduction. The RF glow discharge has been characterized in terms of plasma density, plasma potential and electron temperature with emissive Langmuir Probe measurements. The structural transition has been observed with a transmission electron microscope.
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