Abstract

An amorphous titanium-oxide film oxidized anodically on amorphous Ti–10at%V–15at%Si alloy ribbons demonstrated excellent electric properties. Specifically, it showed a remarkable increase in parallel capacitance Cp, series capacitance Cs, time constant RCs, and decrease in the dielectric loss with decreasing frequency. The oblate semicircle after a semicircle with a Warburg region in the Nyquist diagram and rapid increases in the real impedance in the low-frequency region in the Bode diagram demonstrated a parallel circuit comprising an electric transport resistance Re (0.64 MΩ), and a high electric double-layer capacitance Cdl (604.0 μF/cm 2) at a nanometer-sized ( in convex size) uneven surface between an upper (Ti0.84V0.11Si0.05)O1.655 layer approximately 45-nm deep and air. The superior capacitances could be elucidated by electrostatic induction of a large positive charge to the uneven oxide surface based on the electronic conduction state derived from TiO2/VO2 nanostructural interfaces in the upper oxide layer.

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