Abstract
A very thin and amorphous TaWSiC film with relatively low resistivity of 233 μΩ·cm was studied for its effectiveness as a diffusion barrier for copper interconnects. A 5 nm thick TaWSiC barrier effectively prevents copper diffusion and maintains structural integrity up to an annealing temperature of at least 550 °C, with copper silicide formation observed at 650 °C. In comparison, a barrier of 5 nm of nanocrystalline Ta already fails at 550 °C. Being very thin and amorphous, while having low resistivity and good thermal stability, are crucial properties of a good diffusion barrier for future technology, and this film meets these requirements.
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