Abstract
Amorphous SiOx nanowires, with diameters of ∼20nm and lengths of tens of μm, were grown from self-organized GeSi quantum dots or GeSi alloy epilayers on Si substrates. The morphologies and yield of these amorphous nanowires depend strongly upon the synthesis temperature. Comparative experiments indicate that the present SiOx nanowires are induced by metallic Ge as catalysts via the solid liquid solid growth mechanism. Two broad peaks centered at 410nm and 570nm were observed in photoluminescence spectrum, indicating that such SiOx nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources.
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