Amorphous Silicon Solar Cells Techniques for Reactive Conditions

Abstract

AbstractThe preparation of amorphous silicon films and solar cells using SiH2Cl2 source gas and electron cyclotron resonance assisted chemical vapor deposition (ECR-CVD) was investigated. By using buffer layers to protect previously deposited layers improved a-Si:H(Cl) solar cells were prepared and studied. The high quality a-Si:H(Cl) films used in this study exhibited low defect densities (~1015cm-3) and high stability under illumination even when the deposition rate was increased to ~15A/s. The solar cells were deposited in the n-i-p sequence. These solar cells achieved VOC values of ~ 0.89V and ~ 3.9% efficiency on Ga doped ZnO (GZO) coated specular substrate. The a-Si:H(C1) electron and hole μτ products were ~10-8cm2/V.