Abstract
A new hydrogenated amorphous silicon/silicon carbide heterojunction bulk unipolar diode (HEBUD) has been successfully fabricated. The sawtooth-shaped composition wave of α-SiC:H between layers of n-type α-Si:H was made on an ITO/glass substrate by the RF glow-discharge deposition method. Rectification produced by an asymmetric potential barrier is demonstrated. Preliminary results showed that the design principle is feasible, and that the device is stable. The capacitance was constant regardless of bias. A switching time of 15 µs and a propagation delay time of 9 µs were obtained.
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