Abstract
In this experiment, GD a-Si film was studied as a bakeout-proof resistive sea for a silicon-diode-array camera-tube target. It was found that the resistivity of an a-Si film deposited at temperatures between 400 and 600°C lay in the range 10-7–10-9 Ωcm, and that the film was suitable for used as a resistive sea when baked out in a vacuum at a temperature below 350°C. An Si target with an a-Si resistive sea from 40 nm to 1 µm thick, deposited at about 400–500°C, was baked in a vacuum at 350°C for two hours and then mounted in a camera tube, giving improved bakeout-proof and X-ray protection characteristics, and low lag.
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