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Abstract
We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W(-1)m(-1). We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (i.e. ~2GW/cm(2)) over timescales of at least an hour.
Highlights
Single crystal silicon-on insulator (SOI), compatible with computer chip technology (CMOS), has attracted huge interest over the past 10 years as a platform for nonlinear nanophotonic devices for all-optical signal processing [1], primarily because of its ability to achieve extremely high nonlinearities (Re(γ) = ω n2 / c Aeff, where Aeff is the waveguide effective area) exceeding 300W−1 m−1 [2]
We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W−1m−1
Significant twophoton absorption (TPA) of crystalline silicon (c-Si) at telecom wavelengths is such that its nonlinear figure of merit (FOM = n2 / βTPAλ, where βTPA is the TPA coefficient and n2 is the Kerr nonlinearity) is in the range of FOM = 0.3 to 0.5 [1] – much less than ideal for nonlinear optical applications
Summary
Significant twophoton absorption (TPA) of crystalline silicon (c-Si) at telecom wavelengths is such that its nonlinear figure of merit (FOM = n2 / βTPAλ, where βTPA is the TPA coefficient and n2 is the Kerr nonlinearity) is in the range of FOM = 0.3 to 0.5 [1] – much less than ideal for nonlinear optical applications This has significantly limited the efficiency of these nonlinear devices the largest parametric gain achieved in the telecom band in c-Si, for example, is only about 2dB [2]. To date a key drawback for this material has been a lack of stability, resulting in a dramatic degradation in performance over relatively short timescales (on the order of a few tens of minutes) [22] Unless this problem can be solved, despite its very promising nonlinear performance, amorphous silicon could well be in danger of becoming an academic curiosity. We experimentally measure self-phase modulation and nonlinear transmission, fit to standard theory, in order to estimate both a high nonlinear FOM and nonlinear Re(γ) factor
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