Abstract
Amorphous silicon/crystalline silicon (c-Si) heterojunctions are studied by contactless transient photoconductivity measurements at the microwave frequency range. Excellent passivation of the n-type crystalline silicon (n c-Si) surface by n-type, hydrogenated amorphous silicon (n a-Si:H) films is observed. The influence of band offsets is discussed. It is shown that energy converting junctions can be characterized accurately by these measurements. Charge carrier kinetics in the junctions are controlled by charge carrier separation determined by band bending and by interface recombination.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
