Abstract
AbstractOur study on amorphous hydrogenated silicon carbonitride thin films produced by remote plasma chemical vapor deposition (RP‐CVD) from 1,1,3,3‐tetramethyldisilazane as a single‐source compound using the H2 + N2 upstream‐gas‐mixture for generation of microwave plasma are reviewed. The effect of nitrogen content in the H2 + N2 mixture fed to a plasma on the rate and yield of the RP‐CVD process, chemical structure, surface morphology, and properties of a‐SiCN films deposited at a constant substrate temperature of TS = 300°C is described. The deposited films were characterized in terms of their chemical structure, surface roughness, density, refractive index, hardness, elasticity, resistance to wear, and friction coefficient. Due to their properties, a‐SiCN films appear to be very promising coatings for improving the surface mechanics of engineering materials used in advanced technologies.
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