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Abstract
It has been proposed and experimentally confirmed that band-engineered hydrogenated amorphous silicon (a-Si:H)/hydrogenated amorphous silicon carbide (a-SiC:H) heterojunctions on c-Si can be applied to electrically programmable and erasable memory devices. A test diode with the structure c-Si/graded a-SiC:H/a-Si:H/uniform a-SiC:H/Al exhibits a large hysteresis in the C-V characteristic with a retention time of 0.8 s at room temperature.
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