Abstract
AbstractLaser ablation has been used to deposit a:SiC-N films from a CVD SiC target. Depositions were carried out either in vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical properties of the films versus nitrogen background pressure were assessed using nanoindentation and surface acoustic wave measurements. Deflected optical beam testing, pull testing and atomic force microscopy were used to determine film stress, film-substrate adhesion and film roughness, respectively. The optical properties were also characterized as a function of nitrogen back pressure using spectroscopic ellipsometry which determined refractive indices and predicted film compositions. Fourier transform infrared spectroscopy determined the bonding structures in the films, and finally Rutherford backscattering spectroscopy measurements were also performed. Based on the best mechanical and optical properties, the optimum film deposition conditions were obtained. It was observed that with an increase in nitrogen background pressure, oxygen content in the film, in the form of SiOx, increased significantly affecting the overall properties of the a:SiC-N films.
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