Amorphous Si–Zn–Sn–O Thin Film Transistor with In–Si–O as Transparent Conducting Electrodes

Abstract

We revealed a novel method to fabricate amorphous silicon-zinc-tin-oxide (a-SZTO) thin-film transistors (TFTs) has been reported with transparent Indium–silicon–oxide (ISO) source/drain (S/D) electrodes. The presented TFTs exhibited a high field-effect mobility of 14.65 cm2/Vs, a threshold voltage of 2.87 V, and a low subthreshold swing of 0.39 V/decade. It is suggested that the small work function of ISO (4.49 eV) compared to that of a-SZTO (4.53 eV) induces an ohmic contact at the ISO/SZTO junction, which makes it possible the effective injection of electrons from oxide materials into the a-SZTO semiconductor. Determine the stability of a-SZTO TFTs under Negative bias temperature stress (NBTS) was measured ∆VTH = 1.21 V at 333 K, and − 20 V for 7200 s.