Abstract
AbstractA sputtering method to prepare amorphous polyphosphide thin films has been investigated. The method consists of sputtering from a polyphosphide (KP15) target and plasma cracking of a P4 vapor stream injected into the plasma from an external phosphorus source. From the deposition rates of KP15 thin films, we determine that the plasma cracking efficiency of the P4 molecule into reactive P species required for compound growth is significantly higher than thermal cracking efficiency. We conclude that this method is applicable to other compound semiconductors (InP) and that the P4 delivery system used here should be useful in other techniques such as MBE or OMCVD
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