Abstract
Amorphous material formation at interfaces of NbSi multilayers during deposition was studied by high resolution transmission electron microscopy. When NbSi multilayers were deposited at room temperature, the multilayers with modulation period L of 4 nm are in the amorphous state, and are composed of Nb-rich amorphous silicide layers and Si-rich amorphous silicide layers; however, when the multilayers were deposited at 200°C, a crystalline cubic Nb 3Si phase with AuCu 3 structure was formed in the multilayer samples. No crystalline Nb silicide was found when the multilayers, deposited at room temperature, were annealed at 320°C. The effects of deposition process on nucleation are discussed. Here the initial amorphization nucleation in NbSi multilayers deposited at room temperature is thermodynamically and kinetically favored.
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