Abstract
Novel molecular resist materials, 1,3,5-tris[2-(4-vinylphenylcarbonyloxy)phenyl]benzene ( o-VCTPB), 1,3,5-tris[3-(4-vinylphenylcarbonyloxy)phenyl]benzene ( m-VCTPB), and 1,3,5-tris[4-(4-vinylphenylcarbonyloxy)phenyl]benzene ( p-VCTPB), were designed and synthesized. They function as negative electron-beam resists, becoming insoluble in developer upon electron-beam exposure. The sensitivity of o-, m-, and p-VCTPB upon exposure to a 20-keV electron beam were 15, 46, and 30 μC cm −2, respectively. These materials permitted the fabrication of line patterns of 100–200 nm upon exposure to a 50-keV electron beam. It is shown that molecular resists are promising candidates for use in the future electron-beam lithography.
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