Abstract
Wide-band-gap semiconductor photosensitive material has a significant impact on the performance of deep-ultraviolet photodetector, which makes exploring novel high-quality wide-band-gap semiconductor a hot topic in the field of deep-ultraviolet detection. In this paper, we propose an efficient method to grow wide-band-gap semiconductor, according to which a wide-band-gap amorphous (LuGa)2O3 film is successfully prepared by magnetron sputtering Lu2O3 and Ga2O3 targets simultaneously, and a photovoltaic type deep-ultraviolet detector based on that amorphous (LuGa)2O3 film is fabricated. The detector exhibits an extremely low dark current of 25 pA, a high photo-to-dark current ratio of 103, a high responsivity of 8.0 mA/W and good stability. All the results achieved in this study demonstrate that magnetron sputtering is an efficient method to grow wide-band-gap alloyed semiconductor and also get the possibility of (LuGa)2O3 film as a promising material for deep-ultraviolet detection.
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