Abstract

Recently, amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) with inkjet printing silver source/drain electrodes have attracted great attention, especially for large area and flexible electronics applications. The silver ink could be divided into two types: one is based on silver nanoparticles, and the other is silver salt ink. Organic materials are essential in the formulation of nanoparticle ink as a strong disperse stabilizer to prevent agglomeration of silver particles, but will introduce contact problems between the silver electrodes and the a-IGZO active layer after annealing, which is difficult to eliminate and leads to poor device properties. Our experiment is aimed to reduce this effect by using a silver salt ink without stabilizer component. With optimized inkjet printing conditions, the high performance of a-IGZO TFT was obtained with a mobility of 4.28 cm2/V·s and an on/off current ratio over 106. The results have demonstrated a significant improvement for a-IGZO TFTs with directly printed silver electrodes. This work presents a promising platform for future printed electronic applications.

Highlights

  • Thin film transistors (TFTs) are fundamental electronic components in virtually all consumer and professional display products, from smart phones to flat panel TVs [1,2,3]

  • The a-IGZO TFTs with printed Ag S/D electrodes from different types of silver inks were studied in this work under optimized conditions

  • The performance of devices fabricated with silver salt ink was was demonstrated much better characteristics than those fabricated with silver nanoparticle ink

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Summary

Introduction

Thin film transistors (TFTs) are fundamental electronic components in virtually all consumer and professional display products, from smart phones to flat panel TVs [1,2,3]. A-IGZO TFTs with printed S/D electrodes are fabricated using a silver salt inkof driving flat ink panel displays [24]. The interface by using silver salt ink, which indicates the solving of the contact problem to some extent this manner, well-performing a-IGZO TFTs were obtained successfully and reasonably.

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