Abstract
The principal objective of the first year of this research program has been to produce alloys of amorphous hydrogenated silicon germanium with a band gap near 1.5 eV that would have better photoelectronic properties than those of a-Si/sub 1-x/Ge/sub x/:H produced to date, that they might be used as components of a tandem solar cell. To this end, a glow-discharge apparatus was modified to permit deposition of alloys from fluorine-containing gases. Different series of alloys were to be produced by adjustment of gas mixtures, substrate temperature, gas pressure, gas flow rates and rf power. The improvements in photoconductivity suggest that further research is desirable to establish the properties of both electrons and holes in device structures made from fluorine-containing gases and to discover the differences in atomic structure and band structure responsible for the different photoelectronic responses.
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