Abstract
ABSTRACTWe present evidence that an independently applied dc bias voltage has a significant effect on the plasma deposition of amorphous hydrogenated silicon carbide. Deposition rates increase with either positive or negative dc voltages applied to the powered rf electrode. The microstructure of the films (as determined by infrared absorption) can be reduced by increasing the plasma potential (positive dc bias voltages). Negative dc biases, or excessively high positive biases, result in increased amounts of film microstructure. Film carbon content is increased when positive biases are applied, but the optical band gaps decrease suggesting increased amounts of graphitic bonding configurations. Negative biases do not change the carbon content of the films, but do increase both deposition rate and microstructure.
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