Abstract
Amorphous germanium–copper alloy films (a-Ge1−xCux, 0.01≤x≤0.3) have been deposited and characterized at temperatures down to 3.9 K. The sheet resistivities of these films can be controlled by varying their copper content and are substantially higher than common thin film resistor materials. The films can be readily patterned by either wet etching or lift-off and are potentially useful for fabricating the high resistances necessary for observing the Coulomb blockade in single tunnel junctions.
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