Abstract
The current work describes the amorphous state to crystalline state transition upon diffusion of the top Te layer into the bottom As2Se3 layer at 200 °C annealing temperature. The Te/As2Se3 bilayer thin films were prepared by electron beam (e-beam) evaporation technique. The XRD study confirms the amorphous to crystalline phase transformation. The UV–Visible spectroscopy data shows significant changes in both linear and non-linear optical properties due to the diffusion of Te into As2Se3 upon thermal annealing. The phase transformation behaviour of the Te/As2Se3 bilayer thin films can be utilized in various optoelectronic applications.
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