Amorphous chalcogenide inorganic resist.

Abstract

Ag-photodoping results in distinct changes in chemical solubility of amorphous chalcogenide films. This enables us to apply an Ag/chalcogenide stacked system to a negative type resist. The Ag/Se-Ge resist, which was first developed as a practical inorganic resist, is still one of the most important inorganic resist systems and holds promise for future applications. This paper outlines fundamental characteristics of Ag/Se-Ge resist applied to various lithography technologies involving UV, deep-UV, x-ray and electron-beam. Emphasis is placed on the discussion with regard to inherent advantages in the use of inorganic amorphous materials. As a specific feature in the resist processing, possible realization of a completely dry lithography process suited for integration into a current multi-chamber tool is also shown.