Amorphous (CeO2)0.67(Al2O3)0.33 high-k gate dielectric thin films on silicon

Abstract

The electrical and physical characteristics of (CeO2)0.67(Al2O3)0.33 (CAO), for use in metal-oxide-semiconductor gate dielectric applications were investigated. The CAO thin films have been deposited at 650 °C in different oxygen pressures by pulsed laser deposition. The CAO thin film was found to exhibit excellent characteristics such as atomic-scale smooth surface, thin interfacial layer, high accumulation capacitance and low leakage current density. This demonstrates that CAO thin film is a promising gate dielectric replacing SiO2 in future for its good physical and electrical properties.