Abstract
Amorphous carbon nitride (CN x ) film is being investigated for use as a high temperature dielectric for high energy density, high pulse power capacitors. It is anticipated that CN x will display properties of high thermal conductivity, thermal stability, electrical resistance, and electrical breakdown strength. Through control of the vacuum environment and deposition parameters of a dual ion-beam assisted, ion-beam sputter deposition system, CN x films were recently created with Nitrogen-to-Carbon (N/C) ratios up to 0.70. Elemental analysis using Rutherford-Backscattering Spectroscopy (RBS) and Elastic Recoil Spectroscopy (ERS) on CN x samples annealed in 99.999% argon shows that the resulting films are thermally stable up to 500 °C. Capacitance measurements performed on these CN x films reveal resistivities up to 1 × 10 12 Ω cm.
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