Abstract
In the present work, filtered arc deposition (FAD) and ion assisted arc adposition (IAAD) techniques have been used to deposit amorphous carbon (a-C) and carbon nitride (a-CN) films. Atomic and electronic structures of a-C films have been characterized by electron diffraction and electron energy loss spectra (EELS). In addition, the properties of a-C and a-CN films have been investigated with respect to field emission behavior and optical properties.
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