Abstract
The characteristics of hydrogenated amorphous silicon carbide films prepared by PECVD and crystallized by KrF UV excimer laser annealing (ELA), for different annealing conditions, are studied to determine particulate size, surface roughness, band gap and resistivity in order to apply them to TFTs fabrication. Raman spectra for ELA SiC films indicate the presence of 6H-SiC polytype together with Si and C crystallites. We also describe the fabrication process to obtain a-Si 1− x C x :H TFTs and ELA TFTs on the same wafer, comparing their output and transfer characteristics.
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