Abstract
It was found that the atomic-hydrogen treatment of n-GaAs epitaxial samples having initially high-quality surfaces both with a SiO2 protective film on the n-layer surface and without it can lead to the amorphization of these surfaces and a thin (≈7 nm) surface layer, which is accompanied by the formation of a hydride phase. The lack of a hydrogen sublattice in the near-surface layer can imply that the main driving forces in the amorphization of epitaxial n-GaAs are short-range chemical interactions between hydrogen atoms and also between hydrogen atoms and atoms of the basic matrix of the crystal.
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