Abstract
Abstract Silicon was implanted at 300 K in a Pd monocrystalline film up to a dose of 1.7 × 1017 at.cm−2. In situ channeling analyses were performed after various implantations with 380 keV 4He++ ions delivered by the implanter itself. Amorphization occurred (and the corresponding kinetics was studied) inside the Si implantation profile. The near-surface layer was only slightly disordered by the Si nuclear stopping-induced displacements. The Si atoms clearly stabilize the amorphous state.
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