Abstract
Evaporated niobium thin films have been homogeneously implanted with boron ions at liquid nitrogen temperature up to boron concentrations of 15 at.%. The structure of the disordered films has been studied using X-ray diffraction. It was found that a boron concentration of up to 5 at.% is incorporated into niobium interstitially, leading to distortions (small atomic displacements) of the b.c.c. host lattice. Then in a narrow boron concentration range (about 3 at.%) the bulk of the material is rendered amorphous and complete amorphization is achieved at a boron concentration of 15 at.%. The amorphous phase has a residual resistivity ratio of unity, a residual resistivity of 120 μΩ cm and a T c value of about 5 K.
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