Abstract
Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si+ at doses between 1 × 1014/cm2 and 1 × 1016/cm2. A dose of 1 × 1015/cm2 minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the amorphous layer at this dose was compared with Monte Carlo damage density distribution calculations (TRIM'90). The threshold damage density (TDD) necessary for amorphization was determined for each compound. The values of the threshold damage density vary from as low as 2.4 × 1019 keV/cm3 for InAs up to 7.3 × 1020 keV/cm3 for AlAs. ZnSe never became amorphous and GaSb exhibited an unusual disordering after the highest dose. The values of the threshold damage density for the various compositions were compared with known thermochemical data and several bond energy estimates. No single calculation explained all of the trends observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
