Abstract
Crystalline Al 0.67Au 0.33-(Al 2Au)-films were irradiated at low temperatures ( T<10 K) with Ar- and He-ions, respectively. The resulting structure was analyzed by in situ electron diffraction and resistivity measurements. Both types of projectiles lead to an amorphous (a-) phase, which is identical to the one found after vapour quenching at temperatures below 80 K. Irradiation at 80 K resulted in the amorphous phase only for Ar-ions, not for He. The results will be discussed within the picture of spikes.
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