Amorphisation during elevated temperature implantation

Abstract

Transition state theory is employed to predict the rates of amorphous zone recrystallisation by direct thermal and radiation mediated thermal annealing processes. These rates are functions of zone radius and are employed to described the competition between amorphous zone generation and annealing during elevated temperature heavy ion implantation of, particulary, Si and the accumulation of amorphousness with increasing ion fluence. This analysis predicts a change from monotonic to sigmoidal to biexponential accumulation functions with increasing annealing rate or substrate temperature in agreement with experiments. A logarithmic dependence of ion flux density upon substrate temperature for the achievement of defined fractional amorphisation is predicted and is in agreement with experiments also.