Abstract
In order to study the kinetics of amorphisation and regrowth m SIMOX material, device grade SIMOX wafers were implanted with 80 and 150 keV 28Si + ions at room temperature over the dose range 1 × 10 14 to 5 × 10 15 cm −2. Bulk silicon control samples ((100), 17 Ω cm) were implanted at the same time under similar conditions. Subsequently these samples were annealed at temperatures of up to 550° C. The regrowth kinetics were studied using 1.5 MeV H + Rutherford backscattering and channeling and in this paper a comparison of the regrowth in bulk silicon and in SIMOX is reported.
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