Abstract
This paper describes and discusses the preparation of aluminium nitride by ammonothermal reaction of aluminium with ammonia using potassium amide as transporting agent. Crystals of aluminium nitride are grown in the temperature range of 500 to 600°C and at ammonia pressures of 2 kbar. KNH 2 is removed from the reaction product by extraction with liquid ammonia. Single crystals of aluminium nitride predominantely grow in the direction of the crystallographic c-axis. Dense layers of single crystals up to a thickness of 1 mm can be produced.
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