Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN

Abstract

Single-step N-for-As metathesis reactions of gallium arsenide GaAs with ammonia NH3 at temperatures in the range 650–950 °C for 6–90 hours afforded high yields of pure nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN.