Abstract
Silicon nitride has been widely used as a pH sensing insulator for ion sensitive field effect transistors employed in complementary metal oxide semiconductor integrated chemical sensors. In this paper, we report a new method for making a silica surface highly sensitive to pH. The photochemical vapor deposition technique can be considered as a suitable approach for aminating the silica surface or the amorphous silicon surface in order to increase its sensitivity to pH. The pH responses of the obtained membranes are Nernstian, indicating a change in the surface sites. X‐ray photoelectron spectroscopy analysis and wettability measurements have been used to characterize the surface site binding after deposition.
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