Abstract
We propose a thermoelectric (TE) energy conversion device based on the surface of a three-dimensional topological insulator (TI) that is magnetically gap-opened and ionically disordered. A pair of top and bottom surfaces of a single TI film takes the role of a vertical p–n junction with ambipolar conduction, which can be considered as a TE module consisting of two dissimilar TE materials. By tuning the surface carrier screening by means of electric gating, we find that the figure of merit ZT of the device exceeds 1 in the low-temperature-regime below 300 K. Our model may represent one direction for the implementation of TE energy conversion and heat management in nanodevices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
