Abstract
Hydrogenated microcrystalline silicon (μc-Si:H) has lately attracted considerable attention as a promising candidate for thin-film transistors (TFTs) in large area electronic applications due to its superior charge carrier mobility. Here, we present ambipolar TFTs and inverters based on microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition at low deposition temperature of 160°C. The electrical parameters of the ambipolar microcrystalline silicon TFTs and inverters will be described. The influence of contact effects on the operation of ambipolar microcrystalline silicon TFTs was investigated. Furthermore, the influence of the ambipolar transistor characteristics on the performance of the ambipolar inverter will be discussed.
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