Abstract
This paper considers the possibility of constructing nonreactive memristor-based oscillators adding a device exhibiting negative differential resistance (NDR). The ambipolarity of the memristor I-V characteristic is shown to ensure the generation mode of such circuits. S-type and N-type variants of the memristor-based oscillator are analyzed. Device and circuit implementations of ambipolar memristors are suggested. NDR devices, as well as single-threshold comparators can be used in the implementation of ambipolar memristor-based oscillators.
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