Abstract
The ambipolar lateral diffusion of photo-induced charge carriers restricted ina plane of a quantum well (QW) under a moderate (non-quantizing) magneticfield is studied theoretically in the framework of the drift-diffusion model. Thecontinuity equation for this case is solved exactly. The analytical expressions for theconcentration of photo-induced electrons and the built-in electric field in the practicallyimportant cases of uniform and bell-shaped light beams are obtained in a closedform. It is shown that the ambipolar lateral diffusion of photo-induced chargecarriers can be suppressed in InGaAs/GaAs QWs by a moderate magnetic field of∼0.5 mT.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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