Abstract

The organic semiconductor, lead phthalocyanine (PbPc) with a low band gap energy of 1.2 eV is demonstrated as an active material for high-performance ambipolar organic field-effect transistors (OFETs). For the ambipolar OFETs with Au source–drain electrodes, the field-effect electron mobility was calculated to be 8.3×10-4 cm2 V-1 s-1, when the threshold voltage was 31 V. On the other hand, the field-effect hole mobility was calculated to be 7.1×10-4 cm2 V-1 s-1, when the threshold voltage was -58 V. After annealing the device for 12 h at 100 °C, the performance was improved and exhibited field-effect mobilities of the order of 10-3 cm2 V-1 s-1 for both carriers.

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