Abstract
The authors have calculated the performance of ambient temperature long wavelength HgCdTe photoconductors as a function of material composition and doping. It has been shown that the figures of merit, both calculated and measured, are several times higher than the ones reported previously. It is concluded that an optimised ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1*10/sup 7/ cm Hz/sup 1/2//W at lambda =10.6 mu m.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
