Abstract
Thin films of tris-(8-hydroxyquinoline) aluminum (Alq 3) were exposed to trace amounts of O 2, CO 2, H 2O, or to ambient air. Evolution of electronic structures of Alq 3 films with increasing gas exposure was measured using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy (XPS). The vacuum energy level, the highest occupied molecular orbital, and XPS core levels of the constituting elements in Alq 3 shifted according to the kind of gas exposure. Chemical reaction between oxygen and the Alq 3 films was observed upon oxygen exposure. Moreover, it was found that the dominant influence of ambient conditions on the electronic structures of the Alq 3 films was from H 2O.
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